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Another feature observed experimentally and in theoretical calculations is that recrystallization of amorphous pockets shows plateaus and step regions, instead of showing a smooth exponential decay governed by a unique activation energy.

Ion-beam-induced amorphization and recrystallization in silicon
by L.Pelaz, J.A. Marqués and J. Barbolla in
J. Appl. Phys. 96, 5947 (2004)

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